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furnace annealing中文是什么意思

  • 爐內(nèi)退火

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  • 例句與用法
  • In this work , the influences of fabrication process on microstructure , dielectric properties , ferroelectric properties and pyroelectric properties of plt films have been studied . plt films were prepared on the pt ( 111 ) / ti / sio2 / si ( 100 ) substrates by radio frequency magnetron sputtering method and then annealed by rapid thermal annealing process ( rta ) or conventional furnace annealing process ( cfa ) . with the help of atom force microscopy ( afm ) , x - ray diffraction ( xrd ) and some other apparatus , it was found that : lower substrate temperature ( ts ) was helpful for plt films to form better surface morphologies . with the increase of substrate temperature , the dielectric constant of plt films increased
    Afm 、 xrd以及性能測(cè)試結(jié)果表明:較低的基片溫度有利于形成表面均勻致密的薄膜,且薄膜的表面粗糙度均方根較小;隨著基片溫度的升高,經(jīng)過(guò)快速退火的plt薄膜的介電常數(shù)逐漸增大;相比于傳統(tǒng)退火,快速退火縮短了退火時(shí)間,提高了薄膜的介電和鐵電性能;快速退火隨著保溫時(shí)間的延長(zhǎng),大部分鈣鈦礦結(jié)構(gòu)的特征峰的峰強(qiáng)增大,半高寬減小,峰形越來(lái)越尖銳,但當(dāng)保溫時(shí)間為80s的時(shí)候, ( 100 )和( 110 )峰的強(qiáng)度有所下降,因此保溫時(shí)間在60s較為適宜。
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